Doctoral Schools WUT

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Wykaz obszarów badawczych związanych z tagiem Interfejsy-i-zlacza-polprzewodnikowe:

# Obszar badawczy Dziedzina naukowa
1 Design and technology of semiconductor devices based on wide bandgap materials (silicon carbide, gallium nitride, gallium oxide, diamond), such as power devices and photodetectors. Analysis of electrophysical properties of interfaces between various materials used in semiconductor technology (metal-semiconductor junctions, p-n junctions, metal-insulator-semiconductor systems, heterojunction structures). Modern technologies of micro-assembly and assembly of advanced printed circuit boards including a flexible solutions. The use of modern power semiconductor devices in power electronics (renewable energy sources, electric drives, smart buildings).